CONTROL OF DIFFUSED DIODE RECOVERY TIME THROUGH GOLD DOPING

被引：9

作者：

FAIRFIELD, JM

GOKHALE, BV

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(66)90045-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：905 / +

页数：1

共 9 条

[1]

ADAMIC J, 1964, WASHINGTON M ELECTRO

BAKANOWSKI, AE ;

FORSTER, JH .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :87-104

[3] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[4] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

[5] PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES [J].

FAIRFIELD, JM ;

SCHWUTTKE, GH .

[6]

KENNEDY DP, 1962, IRE T ELECTRON DEV, V9, P174

[7]

KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[8]

Ko W. H., 1961, IRE T ELECTRON DEV, V8, P123, DOI 10.1109/T-ED.1961.14719

[9]

MOLL LL, 1962, P IRE, V50, P43