HETEROEPITAXY OF ZNSE ON GAAS BY HYDROGEN TRANSPORT

被引：7

作者：

CHEVRIER, J ^{[1
]}

ETIENNE, D ^{[1
]}

CAMASSEL, J ^{[1
]}

AUVERGNE, D ^{[1
]}

PONS, JC ^{[1
]}

MATHIEU, H ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,MONTPELLIER 34060,FRANCE

来源：

MATERIALS RESEARCH BULLETIN | 1972年 / 7卷 / 12期

关键词：

D O I：

10.1016/0025-5408(72)90185-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1485 / 1492

页数：8

共 18 条

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ETIENNE, D ;

CHEVRIER, J ;

BOHE, C .

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[3] GROWTH OF EPITAXIAL ZNSE UPON GERMANIUM SUBSTRATES [J].

CALOW, JT ;

KIRK, DL ;

OWEN, SJT .

THIN SOLID FILMS, 1972, 9 (03) :409-&

[4]

Curtis B. J., 1970, Journal of Crystal Growth, V6, P269, DOI 10.1016/0022-0248(70)90079-5

[5] VACUUM DEPOSITION OF EPITAXIAL ZNSE ON GAAS [J].

GENTHE, JE ;

ALDRICH, RE .

THIN SOLID FILMS, 1971, 8 (02) :149-&

[6] HETEROEPITAXIAL OVERGROWTH OF ZNS ON GAS SINGLE CRYSTALS [J].

HARSY, M ;

LENDVAY, E .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (11) :988-&

[7] GROWTH HILLOCKS AND CRYSTAL STRUCTURES IN HETEROEPITAXIAL CDS DEPOSITED ON GAAS [J].

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) :642-&

[8] LUMINESCENCE IN AS-GROWN ZNSE CRYSTALS CONTAINING CU IMPURITY [J].

IIDA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (05) :1140-&

[9] EXPITAXIAL GROWTH OF ZINC SULPHIDE ON SILICON BY FORCED VAPOUR TRANSPORT IN HYDROGEN FLOW [J].

LILLEY, P ;

JONES, PL ;

LITTING, CNW .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (10) :891-&

[10]

LILLEY P, 1972, J CRYST GROWTH, V13, P371

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