VACUUM DEPOSITION OF EPITAXIAL ZNSE ON GAAS

[1] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[2] GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SELENIDE ON P-TYPE GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1968, 28 (01): : 295 - &

[3] ELLIS RC, CITED INDIRECTLY

[4] FOLSTER HF, PERSONAL COMMUNICATI

[5] ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 518 - +

[6] ELECTROOPTIC LIGHT MODULATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1374 - +

[7] KILLER LR, 1960, J ELECTROCHEM SOC, V107, P973

[8] CORRECTION [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 470 - &

[9] MCQUAID RW, 1962, P IRE, V50, P2484

[10] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1425 - 1428

[1] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[2] GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SELENIDE ON P-TYPE GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1968, 28 (01): : 295 - &

[3] ELLIS RC, CITED INDIRECTLY

[4] FOLSTER HF, PERSONAL COMMUNICATI

[5] ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 518 - +

[6] ELECTROOPTIC LIGHT MODULATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1374 - +

[7] KILLER LR, 1960, J ELECTROCHEM SOC, V107, P973

[8] CORRECTION [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 470 - &

[9] MCQUAID RW, 1962, P IRE, V50, P2484

[10] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1425 - 1428