FERROELECTRIC THIN-FILMS FOR MEMORY APPLICATIONS - SOL-GEL PROCESSING AND DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS

被引：18

作者：

KLEE, M ^{[1
]}

LARSEN, PK ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

FERROELECTRICS | 1992年 / 133卷 / 1-4期

关键词：

D O I：

10.1080/00150199208217981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(ZrxTi1-x)O3 (PZT), Bi4Ti3O12 and BaTiO3 films as well as SrTiO3 films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of the thin films are summarized.

引用

页码：91 / 96

页数：6

共 21 条

[1]

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[2]

Budd K.D., 1986, MATER RES SOC S P, V73, P711

[3]

BUHAY H, 1991, 7TH 1990 IEEE INT S, P139

[4] PREPARATION OF FERROELECTRIC PZT FILMS BY THERMAL-DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS [J].