DEEP LEVELS IN ELECTRON-IRRADIATED EDGE-DEFINED FILM-FED GROWTH RIBBON SILICON

被引：11

作者：

JAWOROWSKI, AE

PIERCE, CB

BURDICK, S

CORBETT, JW

HANOKA, JI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3337 / 3340

页数：4

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