COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS

被引：63

作者：

KURIYAMA, H ^{[1
]}

NOHDA, T ^{[1
]}

AYA, Y ^{[1
]}

KUWAHARA, T ^{[1
]}

WAKISAKA, K ^{[1
]}

KIYAMA, S ^{[1
]}

TSUDA, S ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CO LTD,CHUO KU,TOKYO 103,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期

关键词：

POLY-SI; EXCIMER LASER ANNEALING; LATERAL GRAIN GROWTH; GRAIN SIZE; CRYSTALLOGRAPHIC ORIENTATION; SURFACE FREE ENERGY; ANISOTROPY; THIN-FILM TRANSISTORS; FIELD EFFECT MOBILITY;

D O I：

10.1143/JJAP.33.5657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral grain growth in nondoped poly-Si films was studied by using Si thin films (500 Angstrom) with different structures as a starting material for excimer laser crystallization. It was clarified that the lateral grain growth phenomenon (micron-size grains with strong (111) orientation) upon excimer laser annealing was strongly affected by both the microstructure and the orientation of the initial Si thin films. This result supports our previous speculation that the principal driving force of the lateral grain growth phenomenon is surface energy anisotropy. Poly-Si thin-him transistors using these films show a high field effect mobility of 440 cm(2)/V.s, achieved through a low-temperature process below 600 degrees C. This excellent electrical characteristic is thought to be due to the large grain size of poly-Si thin film with controlled orientation, good crystallinity, and a smooth surface.

引用

页码：5657 / 5662

页数：6

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