LATERAL GRAIN-GROWTH OF POLY-SI FILMS WITH A SPECIFIC ORIENTATION BY AN EXCIMER-LASER ANNEALING METHOD

被引：69

作者：

KURIYAMA, H ^{[1
]}

NOHDA, T ^{[1
]}

ISHIDA, S ^{[1
]}

KUWAHARA, T ^{[1
]}

NOGUCHI, S ^{[1
]}

KIYAMA, S ^{[1
]}

TSUDA, S ^{[1
]}

NAKANO, S ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CO LTD,CHUO KU,TOKYO 103,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

POLY-SI; EXCIMER LASER ANNEALING; LATERAL GRAIN GROWTH; GRAIN SIZE; CRYSTALLOGRAPHIC ORIENTATION; SURFACE FREE ENERGY; ANISOTROPY;

D O I：

10.1143/JJAP.32.6190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dramatic lateral grain growth of nondoped poly-Si films (maximum grain size: approximately 4.5 mum, film thickness: 500 angstrom) with strong crystallographic (111) orientation on glass substrates has been achieved using an excimer laser annealing method, namely at low temperature below 400-degrees-C and in a processing time shorter than a second, for the first time. The surface morphology of these poly-Si films was very smooth and the crystallinity was excellent with minimal internal defects. These poly-Si films have monomodally distributed grain sizes, with an average grain size of around 1.5 mum. As a result of experimental study, we speculate that the basic driving force behind this lateral grain growth was surface free energy anisotropy, as the same mechanism was observed in high-temperature furnace annealing of doped poly-Si thin films.

引用

页码：6190 / 6195

页数：6

共 25 条

[1] POLYSILICON THIN-FILM TRANSISTORS WITH UNIFORM PERFORMANCE FABRICATED BY EXCIMER LASER ANNEALING [J].