COMPENSATION OF GRAIN-GROWTH ENHANCEMENT IN DOPED SILICON FILMS

[1] EFFECT OF IMPURITIES ON THE GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 235 - 245

[2] CAHN RW, 1970, PHYSICAL METALLURGY, pCH19

[3] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118

[4] FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[6] GROVENOR CRM, 1984, PHILOS MAG A, V50, P409, DOI 10.1080/01418618408244236

[7] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 665 - 671

[8] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405

[9] GRAIN-GROWTH MECHANISMS IN POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1791 - 1795

[10] ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3548 - 3557

[1] EFFECT OF IMPURITIES ON THE GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 235 - 245

[2] CAHN RW, 1970, PHYSICAL METALLURGY, pCH19

[3] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118

[4] FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[6] GROVENOR CRM, 1984, PHILOS MAG A, V50, P409, DOI 10.1080/01418618408244236

[7] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 665 - 671

[8] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405

[9] GRAIN-GROWTH MECHANISMS IN POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1791 - 1795

[10] ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3548 - 3557