EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI

被引：92

作者：

LIETOILA, A

WAKITA, A

SIGMON, TW

GIBBONS, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4399 / 4405

页数：7

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[1] Chu WK., 1978, BACKSCATTERING SPECT
[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA
CSEPREGI, L
KENNEDY, EF
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911
[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS
CSEPREGI, L
KENNEDY, EF
GALLAGHER, TJ
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240
[4] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[5] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS
DROSD, B
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110
[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON
HOFKER, WK
OOSTHOEK, DP
KOEMAN, NJ
DEGREFTE, HAM
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04): : 223 - 231
[8] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL
NISHI, H
SAKURAI, T
FURUYA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466
[9] RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS AND HEAVILY DAMAGED SEMICONDUCTORS
SIGMON, TW
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1767 - 1770
[10] COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI
SUNI, I
GOLTZ, G
GRIMALDI, MG
NICOLET, MA
LAU, SS
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 269 - 271