EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI

[11] SZE SM, 1969, PHYSICS SEMICONDUCTO, P57

[12] Van Vechten J. A., 1975, Lattice Defects in Semiconductors, 1974, P212

[13] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550

[14] THE INFLUENCE OF HIGH IMPLANT CONCENTRATION ON SOLID-PHASE EPITAXIAL REGROWTH IN (100) AND (111) SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 157 - 160

[11] SZE SM, 1969, PHYSICS SEMICONDUCTO, P57

[12] Van Vechten J. A., 1975, Lattice Defects in Semiconductors, 1974, P212

[13] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550

[14] THE INFLUENCE OF HIGH IMPLANT CONCENTRATION ON SOLID-PHASE EPITAXIAL REGROWTH IN (100) AND (111) SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 157 - 160