CHARACTERISTICS OF MOSFETS ON LARGE-GRAIN POLYSILICON FILMS

被引:35
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KATOH, T
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10.1109/16.3346
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:923 / 928
页数:6
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共 15 条
[1]   LOW RESISTANCE POLYCRYSTALLINE SILICON BY BORON OR ARSENIC IMPLANTATION AND THERMAL CRYSTALLIZATION OF AMORPHOUSLY DEPOSITED FILMS [J].
BECKER, FS ;
OPPOLZER, H ;
WEITZEL, I ;
EICHERMULLER, H ;
SCHABER, H .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1233-1236
[2]   POLY-SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
FA, CH ;
JEW, TT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :290-+
[3]   EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J].
FOSSUM, JG ;
ORTIZCONDE, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :933-940
[4]   HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
HARBEKE, G ;
KRAUSBAUER, L ;
STEIGMEIER, EF ;
WIDMER, AE ;
KAPPERT, HF ;
NEUGEBAUER, G .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :249-251
[5]   PROCESS AND PERFORMANCE COMPARISON OF AN 8K X 8-BIT SRAM IN 3 STACKED CMOS TECHNOLOGIES [J].
HITE, LR ;
SUNDARESAN, R ;
MALHI, SDS ;
LAM, HW ;
SHAH, AH ;
HESTER, RK ;
CHATTERJEE, PK .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :548-550
[6]   FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI .
SOLID-STATE ELECTRONICS, 1972, 15 (07) :789-&
[7]   EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].
NG, KK ;
CELLER, GK ;
POVILONIS, EI ;
FRYE, RC ;
LEAMY, HJ ;
SZE, SM .
ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318
[8]   LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT) [J].
NOGUCHI, T ;
HAYASHI, H ;
OHSHIMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L121-L123
[9]   GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY [J].
SAITOH, S ;
SUGII, T ;
ISHIWARA, H ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L130-L132
[10]   LATERAL SOLID-PHASE EPITAXY OF SI OVER SIO2 PATTERNS AND ITS APPLICATION TO SILICON-ON-INSULATOR TRANSISTORS [J].
SASAKI, M ;
KATOH, T ;
ONODA, H ;
HIRASHITA, N .
APPLIED PHYSICS LETTERS, 1986, 49 (07) :397-399