GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] DONOVAN TM, 1971, PHYS REV LETT, V27, P1974

[3] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 840 - 842

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] DONOVAN TM, 1971, PHYS REV LETT, V27, P1974

[3] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 840 - 842