EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：34

作者：

FOTI, G ^{[1
]}

BEAN, JC ^{[1
]}

POATE, JM ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：840 / 842

页数：3

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