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LATERAL SOLID-PHASE EPITAXY OF SI OVER SIO2 PATTERNS AND ITS APPLICATION TO SILICON-ON-INSULATOR TRANSISTORS

被引：20
作者：
SASAKI, M
KATOH, T
ONODA, H
HIRASHITA, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 07期
关键词：
D O I：
10.1063/1.97599
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：397 / 399
页数：3
相关论文
共 6 条
[1]  
CSEPREGI L, 1978, J APPL PHYS, V49, P3096
[2]   LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS [J].
ISHIWARA, H ;
YAMAMOTO, H ;
FURUKAWA, S ;
TAMURA, M ;
TOKUYAMA, T .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1028-1030
[3]   SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J].
KUNII, Y ;
TABE, M ;
KAJIYAMA, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2847-2849
[4]   AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY [J].
KUNII, Y ;
TABE, M ;
KAJIYAMA, K .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :279-285
[5]   SOLID-PHASE LATERAL EPITAXIAL-GROWTH ONTO ADJACENT SIO2 FILM FROM AMORPHOUS-SILICON DEPOSITED ON SINGLE-CRYSTAL SILICON SUBSTRATE [J].
OHMURA, Y ;
MATSUSHITA, Y ;
KASHIWAGI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03) :L152-L154
[6]  
YAMAMOTO H, 1984, 16TH C SOL STAT DEV, P507
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