SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING

被引：39

作者：

KUNII, Y

TABE, M

KAJIYAMA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2847 / 2849

页数：3

共 7 条

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[3] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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[5] METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN LATERALLY SEEDED EPITAXIAL SI LAYERS ON SIO2 [J].

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TAKEMOTO, I ;

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APPLIED PHYSICS LETTERS, 1982, 41 (01) :59-61

[6] SOLID-PHASE LATERAL EPITAXIAL-GROWTH ONTO ADJACENT SIO2 FILM FROM AMORPHOUS-SILICON DEPOSITED ON SINGLE-CRYSTAL SILICON SUBSTRATE [J].

OHMURA, Y ;

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KASHIWAGI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03) :L152-L154

[7] LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION [J].

SAKURAI, J ;

KAWAMURA, S ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :64-67

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