METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN LATERALLY SEEDED EPITAXIAL SI LAYERS ON SIO2

被引：16

作者：

MIYAO, M

OHKURA, M

TAKEMOTO, I

TAMURA, M

TOKUYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：59 / 61

页数：3

共 11 条

[1] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].

GIBBONS, JF ;

LEE, KF ;

MAGEE, TJ ;

PENG, J ;

ORMOND, R .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833

[2] LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE [J].

KAMINS, TI ;

CASS, TR ;

DELLOCA, CJ ;

LEE, KF ;

PEASE, RFW ;

GIBBONS, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1151-1154

[3]

Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

[4] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

LAM, HW ;

PINIZZOTTO, RF ;

TASCH, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986

[5] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J].

SAKURAI, J ;

KAWAMURA, S ;

MORI, H ;

NAKANO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L176-L178

[6]

SMITH HI, 1978, APPL PHYS LETT, V32, P349, DOI 10.1063/1.90054

[7] SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING [J].

TAMURA, M ;

TAMURA, H ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L23-L26

[8] ORIENTED CRYSTAL-GROWTH OF SI ON SIO2 PATTERNS BY PULSE RUBY-LASER ANNEALING [J].

TAMURA, M ;

TAMURA, H ;

MIYAO, M ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :43-48

[9] LASER-INDUCED LATERAL, VERTICALLY-SEEDED EPITAXIAL REGROWTH OF DEPOSITED SI FILMS OVER VARIOUS SIO2 PATTERNS [J].

TAMURA, M ;

OHKURA, M ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :193-198

[10] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J].

TASCH, AF ;

HOLLOWAY, TC ;

LEE, KF ;

GIBBONS, JF .

ELECTRONICS LETTERS, 1979, 15 (14) :435-437

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