LASER-INDUCED LATERAL, VERTICALLY-SEEDED EPITAXIAL REGROWTH OF DEPOSITED SI FILMS OVER VARIOUS SIO2 PATTERNS

被引：10

作者：

TAMURA, M

OHKURA, M

TOKUYAMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：193 / 198

页数：6

共 10 条

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[8] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J].

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[9] SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING [J].

TAMURA, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L23-L26

[10] ORIENTED CRYSTAL-GROWTH OF SI ON SIO2 PATTERNS BY PULSE RUBY-LASER ANNEALING [J].

TAMURA, M ;

TAMURA, H ;

MIYAO, M ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :43-48

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