ZONE-MELTING RECRYSTALLIZATION OF 3-IN-DIAM SI FILMS ON SIO2-COATED SI SUBSTRATES

被引：22

作者：

FAN, JCC

TSAUR, BY

CHAPMAN, RL

GEIS, MW

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：186 / 188

页数：3

共 8 条

[1]

BEZZIAN KA, UNPUB J ELECTROCHEM

[2]

Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[3] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[4] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[5] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[6] SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATION [J].

PINIZZOTTO, RF ;

LAM, HW ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :388-390

[7] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :561-563

[8] EFFECTS OF SUBGRAIN BOUNDARIES ON CARRIER TRANSPORT IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :79-82

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