LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION

被引：16

作者：

SAKURAI, J

KAWAMURA, S

NAKANO, M

TAKAGI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：64 / 67

页数：4

共 7 条

[1] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].

BIEGELSEN, DK ;

JOHNSON, NM ;

BARTELINK, DJ ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152

[2] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

[3] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J].

KAWAMURA, S ;

SAKURAI, J ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :394-395

[4]

Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

[5] SEEDED AND LIMITED SEEDING REGROWTH OF SI OVER SIO2 BY CW LASER ANNEALING [J].

MAGEE, TJ ;

PALKUTI, LJ ;

ORMOND, R ;

LEUNG, C ;

GRAHAM, S .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :248-250

[6] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J].

SAKURAI, J ;

KAWAMURA, S ;

MORI, H ;

NAKANO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L176-L178

[7]

TAMARU M, 1980, JPN J APPL PHYS, V19, pL23

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