AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY

[1] Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] CSEPREGI L, 1977, J APPL PHYS, V48, P4241

[4] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[5] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849

[7] SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1431 - 1436

[8] KUNII Y, 1983, JPN J APPL PHYS S1, V22, P605

[9] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405

[10] VANVECHTEN JA, 1976, PHYS REV B, V14, P3553

[1] Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] CSEPREGI L, 1977, J APPL PHYS, V48, P4241

[4] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[5] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849

[7] SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1431 - 1436

[8] KUNII Y, 1983, JPN J APPL PHYS S1, V22, P605

[9] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405

[10] VANVECHTEN JA, 1976, PHYS REV B, V14, P3553