LOW RESISTANCE POLYCRYSTALLINE SILICON BY BORON OR ARSENIC IMPLANTATION AND THERMAL CRYSTALLIZATION OF AMORPHOUSLY DEPOSITED FILMS

被引：36

作者：

BECKER, FS

OPPOLZER, H

WEITZEL, I

EICHERMULLER, H

SCHABER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1233 / 1236

页数：4

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