THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI

被引：109

作者：

LIETOILA, A

GIBBONS, JF

SIGMON, TW

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：765 / 768

页数：4

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共 13 条

[1] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS
BENNEMAN, KH
[J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +
[2] Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9
[3] CHU WK, 1978, LASER SOLID INTERACT, V50, P305
[4] CHU WK, 1980, LASER ELECTRON BEAM, V80, P361
[5] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1689 - 1696
[6] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
GAT, A
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144
[7] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON
GAT, A
LIETOILA, A
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2926 - 2929
[8] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING
LIETOILA, A
GIBBONS, JF
MAGEE, TJ
PENG, J
HONG, JD
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 532 - 534
[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM
NISSIM, YI
LIETOILA, A
GOLD, RB
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 274 - 279
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P43