TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM

被引：227

作者：

NISSIM, YI

LIETOILA, A

GOLD, RB

GIBBONS, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：274 / 279

页数：6

共 12 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[2] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

[3]

CSEPREGI L, 1978, P S THIN FILM PHENOM, P77

[4]

FAN JCC, 1979, 7TH P INT S GAAS REL, P472

[5] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

GAT, A ;

LIETOILA, A ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2926-2929

[6] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[7]

HO CY, 1974, J PHYS CHEM REF DATA, V3, pI588

[8] THERMAL RESISTANCE OF HEAT SINKS WITH TEMPERATURE-DEPENDENT CONDUCTIVITY [J].

JOYCE, WB .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :321-322

[9]

KATCHURIN GA, 1976, SOV PHYS SEMICOND, V10, P1128

[10] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

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