TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE

被引：226

作者：

LAX, M ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.90505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：786 / 788

页数：3

共 12 条

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[10] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].

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