RESISTIVITY CHANGES OF HEAVILY-BORON-DOPED CVD-PREPARED POLYCRYSTALLINE SILICON CAUSED BY THERMAL ANNEALING

被引：38

作者：

MAKINO, T

NAKAMURA, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 01期

关键词：

D O I：

10.1016/0038-1101(81)90211-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：49 / 55

页数：7

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