EFFECT OF HEAT-TREATMENT ON RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS

被引：2

作者：

FRIPP, AL ^{[1
]}

机构：

[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665

来源：

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING | 1975年 / 11卷 / 03期

关键词：

D O I：

10.1109/TPHP.1975.1135062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：239 / 240

页数：2

共 10 条

[1] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[2] DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON [J].

FRIPP, AL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1240-1244

[3]

IRWIN JC, 1972, BELL SYST TECH J, V41, P387

[4] P-CHANNEL CHARGE-COUPLED DEVICES WITH RESISTIVE GATE STRUCTURE [J].

KIM, CK ;

SNOW, EH .

APPLIED PHYSICS LETTERS, 1972, 20 (12) :514-&

[5] CHARGE-COUPLES DIGITAL CIRCUITS [J].

KOSONOCKY, WF ;

CARNES, JE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (05) :314-+

[6]

LIN HC, 1972, IEEE T ELECTRON DEV, VED19, P1199

[7] MINIMIZATION OF PARASITICS IN INTEGRATED CIRCUITS BY DIELECTRIC ISOLATION [J].

MAXWELL, DA ;

BEESON, RH ;

ALLISON, DF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) :20-&

[8] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J].

SARACE, JC ;

KERWIN, RE ;

KLEIN, DL ;

EDWARDS, R .

SOLID-STATE ELECTRONICS, 1968, 11 (07) :653-+

[9]

SCHNABLE GL, 1966, ELECTROCHEM TECHNOL, V4, P57

[10]

WHITE MH, 1972, DEC INT EL DEV M WAS

← 1 →