PROCESS AND PERFORMANCE COMPARISON OF AN 8K X 8-BIT SRAM IN 3 STACKED CMOS TECHNOLOGIES

被引：5

作者：

HITE, LR

SUNDARESAN, R

MALHI, SDS

LAM, HW

SHAH, AH

HESTER, RK

CHATTERJEE, PK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：548 / 550

页数：3

共 4 条

[1] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[2] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

[3]

Sundaresan R., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P871

[4] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J].

TASCH, AF ;

HOLLOWAY, TC ;

LEE, KF ;

GIBBONS, JF .

ELECTRONICS LETTERS, 1979, 15 (14) :435-437

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