FREQUENCY-TUNABLE SEMICONDUCTOR-LASERS

被引:15
作者
MURATA, S
MITO, I
机构
[1] Opto-Electronics Research Laboratory, NEC Corporation, Kawasaki
关键词
D O I
10.1007/BF02189705
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent advances in frequency-tunable semiconductor lasers are reviewed. They are classified into hybrid and monolithic tunable lasers. Monolithic tunable lasers based on distributed Bragg reflector or distributed feedback laser structures are most attractive for practical applications. The device structures and the tuning characteristics are described, with emphasis on the tuning range, spectral linewidth and frequency-switching time. Recent system experiments using monolithic tunable lasers in an optical communication area are also described. © 1990 Chapman and Hall Ltd.
引用
收藏
页码:1 / 15
页数:15
相关论文
共 39 条
[31]   AN OPTICAL SWITCHING AND ROUTING SYSTEM USING FREQUENCY TUNABLE CLEAVED-COUPLED-CAVITY SEMICONDUCTOR-LASERS [J].
OLSSON, NA ;
TSANG, WT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) :332-334
[32]  
SHIBUTANI M, 1989, FEB OPT FIB COMM C O
[33]  
SHIMOSAKA N, 1988, JAN OPT FIB COMM C O, P168
[34]  
THOMORI Y, 1986, ELECTRON LETT, V22, P138
[35]   WAVELENGTH TUNING OF GAINASP-INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED BRAGG REFLECTOR [J].
TOHMORI, Y ;
SUEMATSU, Y ;
TSUSHIMA, H ;
ARAI, S .
ELECTRONICS LETTERS, 1983, 19 (17) :656-657
[36]  
TSANG WT, 1986, SEMICONDUCTORS SEM B, V22, P257
[37]   10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J].
WYATT, R ;
DEVLIN, WJ .
ELECTRONICS LETTERS, 1983, 19 (03) :110-112
[38]   MULTIELECTRODE DISTRIBUTED FEEDBACK LASER FOR PURE FREQUENCY-MODULATION AND CHIRPING SUPPRESSED AMPLITUDE-MODULATION [J].
YOSHIKUNI, Y ;
MOTOSUGI, G .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (04) :516-522
[39]   BROAD WAVELENGTH TUNING UNDER SINGLE-MODE OSCILLATION WITH A MULTIELECTRODE DISTRIBUTED FEEDBACK LASER [J].
YOSHIKUNI, Y ;
OE, K ;
MOTOSUGI, G ;
MATSUOKA, T .
ELECTRONICS LETTERS, 1986, 22 (22) :1153-1154