GAAS-BASED OPTO-THYRISTOR FOR PULSED POWER APPLICATIONS

被引：30

作者：

HUR, JH ^{[1
]}

HADIZAD, P ^{[1
]}

HUMMEL, SG ^{[1
]}

DZURKO, KM ^{[1
]}

DAPKUS, PD ^{[1
]}

FETTERMAN, HR ^{[1
]}

GUNDERSEN, MA ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 12期

关键词：

D O I：

10.1109/16.64528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum dc blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 A, and the current rate of rise was better than 1.5 x 1010 A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times. © 1990 IEEE

引用

页码：2520 / 2525

页数：6

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