GROWTH OF SINGLE-CRYSTAL AND POLYCRYSTALLINE INSULATING FLUORIDE FILMS ON SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY

被引：32

作者：

SULLIVAN, PW

COX, TI

FARROW, RFC

JONES, GR

GASSON, DB

SMITH, CS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：731 / 732

页数：2

共 5 条

[1] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS
FARROW, RFC
SULLIVAN, PW
WILLIAMS, GM
JONES, GR
CAMERON, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
[2] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[3] VAPORIZATION OF HG1-XCDXTE CRYSTALS - CASE OF GROSS INCONGRUENCY
FARROW, RFC
JONES, GR
WILLIAMS, GM
SULLIVAN, PW
BOYLE, WJO
WOTHERSPOON, JTM
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (10) : L117 - &
[4] FARROW RFC, UNPUB
[5] SULLIVAN PA, UNPUB