ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE

被引：7

作者：

CEMBALI, F

GALLONI, R

ZIGNANI, F

机构：

[1] CNR,LAB CHIM & TECNOL MAT,VIA CASTAGNOLI 1,BOLOGNA,ITALY

[2] CNR,LAB COMPONENTI ELETTR,VIA CASTAGNOLI 1,BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 26卷 / 03期

关键词：

D O I：

10.1080/00337577508234746

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：161 / 171

页数：11

共 11 条

[1] DOPING AND RADIATION-DAMAGE PROFILES OF P+IONS IMPLANTED IN SILICON ALONG [110] AXIS
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GALLONI, R
MOUSTY, F
ROSA, R
ZIGNANI, F
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[2] TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION-IMPLANTED SILICON
CEMBALI, F
GALLONI, R
ZIGNANI, F
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1974, 7 (09): : 698 - 700
[3] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C
CROWDER, BL
FAIRFIELD, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 363 - +
[4] Dearnaley G., 1970, Atomic collision phenomena in solids, P633
[5] DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439
[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[7] Goode P. D., 1970, Radiation Effects, V6, P237, DOI 10.1080/00337577008236302
[8] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON
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HIRATA, M
SAITO, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) : 405 - &
[9] NELSON RS, 1970, P EUROPEAN C ION IMP, P212
[10] THOMSON MW, 1969, DEFECTS RADIATION DA