DOPING AND RADIATION-DAMAGE PROFILES OF P+IONS IMPLANTED IN SILICON ALONG [110] AXIS

被引：9

作者：

CEMBALI, F ^{[1
]}

GALLONI, R ^{[1
]}

MOUSTY, F ^{[1
]}

ROSA, R ^{[1
]}

ZIGNANI, F ^{[1
]}

机构：

[1] CNR,LAB CHIM & TECNOL MAT & COMPONENTI ELECTTR,40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 21卷 / 04期

关键词：

D O I：

10.1080/00337577408232414

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：255 / 264

页数：10

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[8] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS [J].

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