COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS

被引：15

作者：

DESALVO, A

ROSA, R

ZIGNANI, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.1661804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3755 / &

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共 30 条

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR
ARCHER, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622
[2] BOGH E, 1956, ELECTROMAGNETICALLY, P101
[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[4] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS
DEARNALEY, G
FREEMAN, JH
GARD, GA
WILKINS, MA
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +
[5] DESALVO A, 1971, CNR7 LAB CHIM TECN M
[6] DESALVO A, 1971, NUOVO CIMENTO LETT, V2, P390
[7] CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON
EISEN, FH
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 561 - &
[8] EISEN FH, 1970, 1969 P INT C AT COLL, P111
[9] PERIODIC DEPENDENCE OF ELECTRONIC STOPPING CROSS SECTION FOR ENERGETIC HEAVY IONS IN SOLIDS
ELHOSHY, AH
GIBBONS, JF
[J]. PHYSICAL REVIEW, 1968, 173 (02): : 454 - &
[10] ELTECKOV VA, 1970, 1969 P INT C AT COLL, P657