FREE-CARRIER ABSORPTION IN THE GE-SB-TE SYSTEM

被引：20

作者：

GONZALEZHERNANDEZ, J ^{[1
]}

LOPEZCRUZ, E ^{[1
]}

YANEZLIMON, M ^{[1
]}

STRAND, D ^{[1
]}

CHAO, BB ^{[1
]}

OVSHINSKY, SR ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 09期

关键词：

DISORDERED SYSTEMS; OPTICAL PROPERTIES; PHASE TRANSITIONS; LIGHT ABSORPTION AND REFLECTION;

D O I：

10.1016/0038-1098(95)00335-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Absorption in the infrared region in the Ge:Sb:Te system has been observed in films having stoichiometric composition. All films were prepared by thermal evaporation from stoichiometric bulk materials. As prepared films have an amorphous structure and they crystallize into a cubic phase when annealed at approximately 200 degrees C. Annealing at temperatures above 200 degrees C induces a crystal to crystal transformation into the rhombohedral phase in all films with the exception of that having the composition (40:10:50). Free carrier absorption is only observed in films in the rhombohedral phase. Hall measurements in similar samples are in good agreement with the infrared data.

引用

页码：593 / 596

页数：4

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