THERMAL AND INFRARED QUENCHING OF PHOTOCONDUCTIVITY IN N-INSE SINGLE CRYSTALS

被引：9

作者：

ABDULLAEV, GB

ALIEVA, MK

MAMEDOVA, AZ

机构：

来源：

PHYSICA STATUS SOLIDI | 1968年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssb.19680250105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：75 / +

页数：1

共 12 条

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[2] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].

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[3] PHOTOCONDUCTIVITY OF GALLIUM SELENIDE CRYSTALS [J].

BUBE, RH ;

LIND, EL .

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BUBE, RH .

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[5]

Bube RH., 1960, PHOTOCONDUCTIVITY SO

[6]

GLINCHUK KD, 1966, FIZ TVERD TELA, V8, P2510

[7]

LASHKARE.VE, 1965, DOKL AKAD NAUK SSSR+, V161, P1310

[8] DETERMINATION OF PARAMETERS OF SENSITIZING RECOMBINATION CENTRES IN CDS AND CDSE SINGLE CRYSTALS BY TEMPERATURE AND OPTICAL QUENCHING OF PHOTOCURRENTS [J].

LASHKAREV, VE ;

SHEINKMAN, MK .

PHYSICA STATUS SOLIDI, 1965, 11 (01) :429-+

[9]

LASHKAREV VE, 1965, FIZ TVERD TELA, V7, P1717

[10]

MEKHTIEV RF, 1962, DOKL AKAD NAUK AZER, V18, P11

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