The electronic band structure of (GaAs)(n)(AlAs)(n) superlattices

被引：9

作者：

Ferraz, AC ^{[1
]}

Srivastava, GP ^{[1
]}

机构：

[1] Univ Ulster, Dept Phys, Coleraine BT52 1SA, Londonderry, North Ireland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 03期

关键词：

D O I：

10.1088/0268-1242/1/3/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the electronic band structure of (GaAs)(n)(AIAs)(n) superlattices. Using the self-consistent local pseudopotential method we conclude that the band diagram of ultrathin as well as multilayer superlattices is similar to that presented in recent experiments. However, some differences are pointed out with regard to the variation of the valence band discontinuity at the GaAs/Al-x Ga1-xAs heterojunction as a function of x.

引用

页码：169 / 171

页数：3

共 16 条

[1] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J].

ANDREONI, W ;

CAR, R .

PHYSICAL REVIEW B, 1980, 21 (08) :3334-3344

[2] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[3] PSEUDOPOTENTIAL CALCULATIONS FOR ULTRATHIN LAYER HETEROSTRUCTURES [J].

CARUTHERS, E ;

LINCHUNG, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1459-1464

[4] ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM [J].

CHELIKOWSKY, JR ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1981, 23 (08) :4013-4022

[5] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J].

DAWSON, P ;

WILSON, BA ;

TU, CW ;

MILLER, RC .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :541-543

[6] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330

[7] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIBASHI, A ;

MORI, Y ;

ITABASHI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695

[8] INFRARED REFLECTIVITY SPECTRA AND RAMAN-SPECTRA OF GA1-XALX AS MIXED-CRYSTALS [J].

KIM, OK ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4362-4370

[9] LONG-RANGE ORDER IN ALXGA1-XAS [J].

KUAN, TS ;

KUECH, TF ;

WANG, WI ;

WILKIE, EL .

PHYSICAL REVIEW LETTERS, 1985, 54 (03) :201-204

[10] ELECTRONIC BAND-STRUCTURE OF (001) GAAS-ALAS SUPER-LATTICES [J].

MON, KK .

SOLID STATE COMMUNICATIONS, 1982, 41 (09) :699-700

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