ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM

被引：43

作者：

CHELIKOWSKY, JR

CHADI, DJ

COHEN, ML

机构：

[1] UNIV OREGON,INST THEORET SCI,DEPT PHYS,EUGENE,OR 97403

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[3] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.23.4013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4013 / 4022

页数：10

共 40 条

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[8] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
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[9] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163
[10] CHEILKOWSKY JR, 1975, SOLID STATE COMMUN, V17, P1103