ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM

被引:43
作者
CHELIKOWSKY, JR
CHADI, DJ
COHEN, ML
机构
[1] UNIV OREGON,INST THEORET SCI,DEPT PHYS,EUGENE,OR 97403
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[3] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 08期
关键词
D O I
10.1103/PhysRevB.23.4013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4013 / 4022
页数:10
相关论文
共 40 条
  • [31] ATOMIC RADII AND INTERATOMIC DISTANCES IN METALS
    PAULING, L
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1947, 69 (03) : 542 - 553
  • [32] PEARSON WB, 1972, CRYSTAL CHEM PHYSICS
  • [33] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS
    ROWE, JE
    CHRISTMAN, SB
    MARGARITONDO, G
    [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1471 - 1475
  • [34] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS ON SI(111) UNRECONSTRUCTED AND (2X1) RECONSTRUCTED SURFACES
    SCHLUTER, M
    CHELIKOWSKY, JR
    LOUIE, SG
    COHEN, ML
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (22) : 1385 - 1388
  • [35] BONDING OF AL AND GA TO GAAS(110)
    SKEATH, P
    LINDAU, I
    SU, CY
    CHYE, PW
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 511 - 516
  • [36] PHOTOEMISSION-STUDY OF THE INTERACTION OF A1 WITH A GAAS (110) SURFACE
    SKEATH, P
    LINDAU, I
    PIANETTA, P
    CHYE, PW
    SU, CY
    SPICER, WE
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 17 (04) : 259 - 265
  • [37] SKEATH P, UNPUBLISHED
  • [38] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)
    TONG, SY
    LUBINSKY, AR
    MRSTIK, BJ
    VANHOVE, MA
    [J]. PHYSICAL REVIEW B, 1978, 17 (08): : 3303 - 3309
  • [39] ADSORPTION OF TYPE-III AND TYPE-V ELEMENTS ON GAAS (110)
    VANLAAR, J
    HUIJSER, A
    VANROOY, TL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1164 - 1167
  • [40] ZUNGER A, UNPUBLISHED