BONDING OF AL AND GA TO GAAS(110)

被引：39

作者：

SKEATH, P

LINDAU, I

SU, CY

CHYE, PW

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：511 / 516

页数：6

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[8] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
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