ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS

被引：60

作者：

CHELIKOWSKY, JR

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(79)91053-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structure of the (110) surface of GaAs is analyzed using a surface relaxation model as determined by recent low energy electron diffraction studies. A self-consistent pseudopotential calculation based on this model yields no intrinsic surface states within the fundamental band gap. Moreover, our calculations are in good agreement with recent photo-emission measurements. © 1979.

引用

页码：267 / 271

页数：5

共 35 条

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