FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS

被引：2

作者：

ARNONE, DD ^{[1
]}

BURROUGHES, JH ^{[1
]}

PEPPER, M ^{[1
]}

GRIMSHAW, MP ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high electron mobility transistor (HEMT) on a patterned GaAs structure consisting of alternate layers of p-GaAs and n-GaAs. Independently contacting the p-GaAs and n-GaAs creates a patterned backgate, which is used to electrostatically induce a lateral modulation of the electron gas in the HEMT. Far-infrared cyclotron resonance spectra demonstrate that lateral confinement energies over the range 1.3-3.3 meV may be selected via tuning of the biases applied to the p-GaAs and n-GaAs layers.

引用

页码：3296 / 3298

页数：3

共 7 条

[1] ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS [J].

BURROUGHES, JH ;

LEADBEATER, ML ;

GRIMSHAW, MP ;

EVANS, RJ ;

RITCHIE, DA ;

JONES, GAC ;

PEPPER, M .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2219-2221

[2] FAR-INFRARED RESPONSE OF ONE-DIMENSIONAL ELECTRONIC SYSTEMS IN SINGLE-LAYERED AND 2-LAYERED QUANTUM WIRES [J].

DEMEL, T ;

HEITMANN, D ;

GRAMBOW, P ;

PLOOG, K .

PHYSICAL REVIEW B, 1988, 38 (17) :12732-12735

[3] QUANTUM WIRES PREPARED BY MOLECULAR-BEAM EPITAXY REGROWTH ON PATTERNED ALGAAS BUFFER LAYERS [J].

EBERL, K ;

GRAMBOW, P ;

LEHMANN, A ;

KURTENBACH, A ;

VONKLITZING, K ;

HEITMANN, D ;

DILGER, M ;

HOHENSTEIN, M .

APPLIED PHYSICS LETTERS, 1993, 63 (08) :1059-1061

[4] INTERSUBBAND RESONANCES IN QUASI-ONE-DIMENSIONAL CHANNELS [J].

KOTTHAUS, JP ;

HANSEN, W ;

POHLMANN, H ;

WASSERMEIER, M ;

PLOOG, K .

SURFACE SCIENCE, 1988, 196 (1-3) :600-610

[5] FORMATION OF A HIGH-QUALITY 2-DIMENSIONAL ELECTRON-GAS ON CLEAVED GAAS [J].

PFEIFFER, L ;

WEST, KW ;

STORMER, HL ;

EISENSTEIN, JP ;

BALDWIN, KW ;

GERSHONI, D ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1697-1699

[6] QUANTUM WIRE STRUCTURES BY MBE OVERGROWTH ON A CLEAVED EDGE [J].

PFEIFFER, L ;

STORMER, HL ;

WEST, K ;

BALDWIN, KW .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :333-338

[7] SCATTERING SUPPRESSION AND HIGH-MOBILITY EFFECT OF SIZE-QUANTIZED ELECTRONS IN ULTRAFINE SEMICONDUCTOR WIRE STRUCTURES [J].

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :L735-L738

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