QUANTUM WIRES PREPARED BY MOLECULAR-BEAM EPITAXY REGROWTH ON PATTERNED ALGAAS BUFFER LAYERS

被引：17

作者：

EBERL, K

GRAMBOW, P

LEHMANN, A

KURTENBACH, A

VONKLITZING, K

HEITMANN, D

DILGER, M

HOHENSTEIN, M

机构：

[1] INST ANGEW PHYS,20355 HAMBURG,GERMANY

[2] MAX PLANCK INST MET RES,INST PHYS,D-70569 STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.109833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation doped GaAs quantum wires are prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers. The structural properties are investigated by scanning electron microscopy and by transmission electron microscopy. Far-infrared spectroscopy provides information about the lateral confinement and the carrier density in the quantum wires. The measurements indicate a distinct dependence of the electronic width on the orientation of the quantum wires within the (100) plane. Confinement energies of 6.9, 9.3, and 11.7 meV are determined for the [011], [001], and the [011BAR] wire orientations, respectively.

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页码：1059 / 1061

页数：3

相关论文

共 13 条

[1] EVOLUTION OF 3D GROWTH-PATTERNS ON NONPLANAR SUBSTRATES [J].

BOCKENHOFF, E ;

BENISTY, H .

JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) :619-632

[2] FAR-INFRARED RESPONSE OF ONE-DIMENSIONAL ELECTRONIC SYSTEMS IN SINGLE-LAYERED AND 2-LAYERED QUANTUM WIRES [J].

DEMEL, T ;

HEITMANN, D ;

GRAMBOW, P ;

PLOOG, K .

PHYSICAL REVIEW B, 1988, 38 (17) :12732-12735

[3] QUANTUM WIRES PREPARED BY LIQUID-PHASE-EPITAXIAL OVERGROWTH OF DRY-ETCHED ALGAAS-GAAS HETEROSTRUCTURES [J].

HORNISCHER, W ;

GRAMBOW, P ;

DEMEL, T ;

BAUSER, E ;

HEITMANN, D ;

VONKLITZING, K ;

PLOOG, K .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :2998-3000

[4] THRESHOLD CURRENT REDUCTION IN PATTERNED QUANTUM-WELL SEMICONDUCTOR-LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAPON, E ;

SIMHONY, S ;

HARBISON, JP ;

FLOREZ, LT ;

WORLAND, P .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1825-1827

[5] IMPROVED PERFORMANCE OF HIGHLY STRAINED INGAAS/GAAS HETEROSTRUCTURE DEVICES GROWN ON PATTERNED GAAS SUBSTRATES [J].

LI, WQ ;

CHAN, YJ ;

BHATTACHARYA, PK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :1035-1037

[6]

MAIER HP, 1989, J CRYST GROWTH, V95, P66

[7] ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES [J].

NAKAMURA, Y ;

KOSHIBA, S ;

TSUCHIYA, M ;

KANO, H ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (06) :700-702

[8] GALLIUM DESORPTION DURING GROWTH OF (AL,GA)AS BY MOLECULAR-BEAM EPITAXY [J].

REITHMAIER, JP ;

BROOM, RF ;

MEIER, HP .

APPLIED PHYSICS LETTERS, 1992, 61 (10) :1222-1224

[9] HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES [J].

SMITH, JS ;

DERRY, PL ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :712-715

[10] STUDY OF FACET GENERATION DURING MBE OF GAAS ON (111)A SUBSTRATES PATTERNED WITH RIDGE-TYPE TRIANGLES [J].

TAKEBE, T ;

FUJII, M ;

YAMAMOTO, T ;

FUJITA, K ;

KOBAYASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :937-941