STUDY OF FACET GENERATION DURING MBE OF GAAS ON (111)A SUBSTRATES PATTERNED WITH RIDGE-TYPE TRIANGLES

被引：18

作者：

TAKEBE, T

FUJII, M

YAMAMOTO, T

FUJITA, K

KOBAYASHI, K

机构：

[1] ATR Optical, Radio Communications Research Laboratories, Soraku-gun, Kyoto, 619-02, 2-2 Hikaridai, Seika-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90764-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Facet generation during molecular beam epitaxial (MBE) growth of GaAs and AlGaAs on (111)A substrates patterned with ridge-type triangles with (001)-related side walls has been investigated for the first time. Extra (113BAR)A, (001), and (114)A facets have been generated on the side walls, while extra (110) and (110)-related facets have developed on the corners of the triangles, depending on the intersection angle theta of the side wall to the substrate plane. By investigating the behavior of these facets in connection with theta, it has been established that it is possible to grow GaAs and AlGaAs layers on (111)A substrates patterned with ridge-type triangles without modifying the initial as-etched patterns or generating these extra facets, in the narrow theta range of 33-degrees to 28-degrees only.

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收藏

页码：937 / 941

页数：5

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