ELECTRICAL-PROPERTIES AND DOPANT INCORPORATION MECHANISMS OF SI DOPED GAAS AND (ALGA)AS GROWN ON (111)A GAAS-SURFACES BY MBE

被引：37

作者：

KADOYA, Y ^{[1
]}

SATO, A ^{[1
]}

KANO, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90985-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The relation of Si incorporation site and the growth parameters in MBE growth of GaAs and (AlGa)As on (111)A surface is systematically investigated. Both n- and p-type GaAs and (AlGa)As layers with reasonably low compensation are achieved, and the dependencies of Si incorporation on the parameters can be qualitatively understood by the change of the population of As atoms at the surface. Two-dimensional electron and hole gas (2DEG, 2DHG) structures are successfully grown on (111)A substrates.

引用

页码：280 / 283

页数：4

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