PLANE-SELECTIVE DOPED ALGAAS/GAAS DOUBLE HETEROSTRUCTURE LIGHT-EMITTING-DIODES

被引：13

作者：

MILLER, DL

ASBECK, PM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90418-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：368 / 372

页数：5

相关论文

共 5 条

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[5] CRYSTAL ORIENTATION DEPENDENCE OF SILICON DOPING IN MOLECULAR-BEAM EPITAXIAL ALGAAS/GAAS HETEROSTRUCTURES [J].

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