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NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
被引:95
作者
:
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 09期
关键词
:
D O I
:
10.1149/1.2131705
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1510 / 1514
页数:5
相关论文
共 7 条
[1]
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[2]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[3]
MICROWAVE FIELD-EFFECT TRANSISTORS 1976
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
LIECHTI, CA
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
: 279
-
330
[4]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[5]
ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS
RODE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
RODE, DL
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
SCHWARTZ, B
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
DILORENZO, JV
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(11)
: 1119
-
1123
[6]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 958
-
&
[7]
ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES
VERPLANKE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VERPLANKE, JC
TIJBURG, RP
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
TIJBURG, RP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
: 802
-
804
←
1
→
共 7 条
[1]
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[2]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[3]
MICROWAVE FIELD-EFFECT TRANSISTORS 1976
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
LIECHTI, CA
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
: 279
-
330
[4]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[5]
ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS
RODE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
RODE, DL
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
SCHWARTZ, B
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
DILORENZO, JV
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(11)
: 1119
-
1123
[6]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 958
-
&
[7]
ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES
VERPLANKE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VERPLANKE, JC
TIJBURG, RP
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
TIJBURG, RP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
: 802
-
804
←
1
→