ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES

被引：31

作者：

VERPLANKE, JC ^{[1
]}

TIJBURG, RP ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 05期

关键词：

D O I：

10.1149/1.2133410

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：802 / 804

页数：3

共 9 条

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[6] RUTHERFORD SCATTERING STUDY OF CHEMICAL COMPOSITION OF NATIVE OXIDES ON GAP [J].

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[7] PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING [J].

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[8]

SCHWARTZ B, 1972, 1972 S GAAS REL COMP, P187

[9] ELECTRICAL PROPERTIES OF A NATIVE OXIDE ON GALLIUM-PHOSPHIDE [J].

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