ELECTRICAL PROPERTIES OF A NATIVE OXIDE ON GALLIUM-PHOSPHIDE

被引:25
作者
SPITZER, SM [1 ]
SCHWARTZ, B [1 ]
KUHN, M [1 ]
机构
[1] BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1149/1.2403530
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:669 / 672
页数:4
相关论文
共 11 条
[1]  
CASTAGNE R, 1968, COMPT REND B, V267, P886
[2]  
GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444
[3]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[4]   IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J].
KUHN, M ;
SILVERSMITH, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :966-+
[5]  
LAMB DR, 1967, ELECTRICAL CONDUCTIO
[7]  
SCHWARTZ B, 1972, J ELECTROCHEM SOC, V119, pC241
[8]  
SCHWARTZ B, TO BE PUBLISHED
[9]  
SNOW EH, 1965, J APPL PHYS, V30, P1164
[10]  
SZE SM, 1969, PHYSICS SEMICONDUCTO