CRYSTAL ORIENTATION DEPENDENCE OF SILICON DOPING IN MOLECULAR-BEAM EPITAXIAL ALGAAS/GAAS HETEROSTRUCTURES

被引：235

作者：

WANG, WI

MENDEZ, EE

KUAN, TS

ESAKI, L

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：826 / 828

页数：3

相关论文

共 19 条

[1] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
BALLINGALL, JM
WOOD, CEC
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 947 - 949
[2] EFFECTIVE MASSES OF HOLES AT GAAS-ALGAAS HETEROJUNCTIONS
BROIDO, DA
SHAM, LJ
[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 888 - 892
[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
WOOD, CEC
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803
[4] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &
[5] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
CHO, AY
HAYASHI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &
[6] CHO AY, 1970, 3RD P INT S GAAS REL, P18
[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[8] CALCULATION OF HOLE SUBBANDS AT THE GAAS-ALXGA1-XAS INTERFACE
EKENBERG, U
ALTARELLI, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3569 - 3570
[9] PHOTOEMISSION AND THEORETICAL-STUDIES OF GAAS(111) AND (111) SURFACES - VACANCY MODELS
KATNANI, AD
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2554 - 2556
[10] FRACTIONAL QUANTUM HALL-EFFECT IN A TWO-DIMENSIONAL HOLE SYSTEM
MENDEZ, EE
WANG, WI
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 1087 - 1089