INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS

被引：82

作者：

ARENT, DJ

NILSSON, S

GALEUCHET, YD

MEIER, HP

WALTER, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.101952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2611 / 2613

页数：3

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[1] STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES
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[2] A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
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[3] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME
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[4] HIGH-POWER CONVERSION EFFICIENCY IN A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER
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[5] CATION INCORPORATION RATE LIMITATIONS IN MOLECULAR-BEAM EPITAXY - EFFECTS OF STRAIN AND SURFACE-COMPOSITION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 259 - 263
[6] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS
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[7] KINETIC ASPECTS OF GROWTH FRONT SURFACE-MORPHOLOGY AND DEFECT FORMATION DURING MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED THIN-FILMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 264 - 268
[8] HIGH-EFFICIENCY, CONTINUOUS-WAVE, EPITAXIAL SURFACE-EMITTING LASER WITH PSEUDOMORPHIC INGAAS QUANTUM WELLS
GOURLEY, PL
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1397 - 1399
[9] THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS
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[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01): : 1 - 130
[10] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 433 - 435